N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08737 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08719 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Audio Frequency Amplifier High Frequency OSC.

文件：25.27 Kbytes 页数：3 Pages

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EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE=600 3600.

文件：395.14 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

TO-126 PACKAGE

文件：422.75 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)