K30H603资料使用说明书批发供应英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
K30H603	文件：2.19193 Mbytes Page：16 Pages	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode 文件：2.19193 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
K30H603	文件：300 bytes Page：1 Pages	High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Features:\nTRENCHSTOP™ technology offering\n• very low VCEsat\n• low EMI\n• Very soft, fast recovery anti-parallel diode\n• maximum junction temperature 175°C\n• qualified according to JEDEC for target applications\n• Pb-free lead plating; RoHS compliant\n• complete product spectrum and PSpice Model	Infineon 英飞凌	Infineon
IKW30N60H3	文件：2.19193 Mbytes Page：16 Pages	丝印：K30H603；Package：PG-TO247-3；IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode 文件：2.19193 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
G30H603	文件：2.10965 Mbytes Page：14 Pages	High speed switching series third generation TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant 文件：2.10965 Mbytes 页数：14 Pages	INFINEON 英飞凌	INFINEON

更多K30H603供应商更新时间2026-4-14 16:49:00