Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

文件：38.64 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N-Channel MOS FET High Speed Power Switching

• Low on-resistance\n• 4V gate drive devices.\n• High speed switching;

HITACHI

日立

8.89mmx19.05mm LED LIGHT BAR

文件：198.66 Kbytes 页数：4 Pages

KINGBRIGHT

今台电子

LED LIGHT BARS

文件：424.51 Kbytes 页数：6 Pages

KINGBRIGHT

今台电子

LOW DROPOUT VOLTAGE REGULATOR

文件：102.56 Kbytes 页数：6 Pages

NJRC

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