TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

FM Tuner, VHF and RF Amplifier Applications
 Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
 Low noise figure: NF = 1.7dB (typ.)
 High power gain: GPS = 28dB (typ.)
 Recommend operation voltage: 5~15 V

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TOSHIBA

东芝

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

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VBSEMI

微碧半导体

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

NEC= RenesasThe 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.\n\nFEATURES\n• Low On-Resistance\n   RDS(on)1= 40 mΩMAX. (@ VGS= 10 V, ID= 15 A)\n   RDS(on)2= 60 mΩMAX. (@ VGS= 4 V, ID= 15 A)\n• Low CissCiss= 1500 pF TYP.\n• High Avalanche Capability • Low On-Resistance\n   RDS(on)1= 40 mΩMAX. (@ VGS= 10 V, ID= 15 A)\n   RDS(on)2= 60 mΩMAX. (@ VGS= 4 V, ID= 15 A)\n• Low CissCiss= 1500 pF TYP.\n• High Avalanche Capability Ratings\n• Built-in G-S Gate Protection Diodes;

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MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.FEATURES\n• Low On-Resistance\n   RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)\n   RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)\n• Low Ciss Ciss = 1500 pF TYP.\n• Built-in G-S Gate P • Low On-Resistance\n• Low Ciss Ciss = 1500 pF TYP.\n• High Avalanche Capability Ratings;

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