N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：123.22 Kbytes 页数：2 Pages

FUJI

富士通

Small switching (60V, 2A)

● Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel.

文件：137.67 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package

Features • Temperature dependent Resistor with Positive Temperature Coefficient • Miniature plastic package for very small thermal time constants • Fast response • High reliability due to multilayer gold contacts • n-conducting silicon crystal • Polarity independent due to symmetrical constr

文件：12.94 Kbytes 页数：2 Pages

SIEMENS

西门子

HIGH POWER LATCHING RELAY

Application Notes 1. It is possible that during transit or final assembly the relay could change state. Therefore, it is recommended that all relays be set to the desired state via a power supply. 2. In order to maintain an “Open” or “Closed” state of the relay, the coil voltage should reach the

文件：3.70717 Mbytes 页数：6 Pages

KG

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Ga

文件：114.98 Kbytes 页数：8 Pages

NEC

瑞萨

Ultrahigh-Speed Switching Applications

Features · Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.

文件：37.65 Kbytes 页数：3 Pages

SANYO

三洋

N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

文件：163.12 Kbytes 页数：3 Pages

TOSHIBA

东芝

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Ga

文件：114.98 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A) RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)

文件：114.96 Kbytes 页数：8 Pages

NEC

瑞萨