Silicon N-Channel Power F-MOS FET

Features 1. Avalanche energy capacity guaranteed: EAS > 15mJ 2. VGSS= ±20V guaranteed 3. High-speed switching: tf = 35ns 4. No secondary breakdown Applications 1. Contactless relay 2. Diving circuit for a solenoid 3. Driving circuit for a motor 4. Control equipment

文件：45.87 Kbytes 页数：3 Pages

PANASONIC

松下

PRE & POWER AMPLIFIER WITH ALC

文件：143.42 Kbytes 页数：4 Pages

NJRC

日本无线

PRE & POWER AMPLIFIER WITH ALC

文件：143.42 Kbytes 页数：4 Pages

NJRC

日本无线

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

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RFMD

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