SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2141 is N-channel Power MOS Field Effect Transis tor designed for high voltage switching applications.\nFEATURES\n• Low On-state Resistance\n  RDS(on)= 1.1 ΩMAX. (VGS= 10 V, ID= 3.0 A)\n• LOWCiss Ciss= 1150 pF TYP.\n• High Avalanche • Low On-state Resistance\n• LOWCiss Ciss= 1150 pF TYP.\n• Isolated TO-220 (MP-45F) Package;

Renesas

瑞萨

R/G/B VIDEO AMPLIFIER FOR MONITORS

R/G/B VIDEO AMPLIFIER The KA2141 is a very high frequency Video amplifier system to be used in Monitor. It contains 3 matched R/G/B video amplifiers with blank signal and clamp gate pulse and provides a flexible interfacing to DC controlled adjustment system FEATURES • 3 - channel R/G/B

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Samsung

三星

VARACTOR DIODES Microwave Hyperabrupt Junction

DESCRIPTION The KV2100 series of microwave hyperabrupt varactor diodes offers octave tuning through 8 GHz. High reliability passivated construction, insures excellent VCO settling time and post tuning drift characteristics. As with their UHF counterparts, straight-line tuning can be achieved ov

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Microsemi

美高森美

Single-chip 16-bit/32-bit microcontrollers; up to 512 kB flash with ISP/IAP, USB 2.0 full-speed device, 10-bit ADC and DAC

General description The LPC2141/42/44/46/48 microcontrollers are based on a 16-bit/32-bit ARM7TDMI-S CPU with real-time emulation and embedded trace support, that combine microcontroller with embedded high-speed flash memory ranging from 32 kB to 512 kB. A 128-bit wide memory interface and a uniq

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PHI

飞利浦