1.0SMB24CA

Marking：K24C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB27A

Marking：K27A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB27CA

Marking：K27C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

2N7002KDW

Marking：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

2N7002KDW-AU_R1_000A1

Marking：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

2SK2094

Marking：K2094；Package：SOT-428；Small switching (60V, 2A)

Structure SiliconN-channelMOSFET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching

2SK2313

Marking：k2313；N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=8mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=60S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=60V) ●Enhancementmode:Vth=0.8to2.0V

2SK2503

Marking：K2503；Package：SOT-428；Small switching (60V, 5A)

Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching

2SK2504

Marking：K2504；Package：SOT-428；Small switching (100V, 5A)

Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching

2SK2504

Marking：K2504；Package：SOT-428；4V Drive Nch MOS FET

Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching