Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：48.86 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : SOT-23. • Low Forward Voltag : VF=0.9V(Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF(Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS193-RTK/HU

文件：104.5 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

SILICON EPITAXIAL PLANAR DIODE

文件：365.33 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

LED ARRAY

文件：124.58 Kbytes 页数：7 Pages

LIGITEK

立碁电子