N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application ● High breakdown voltage : VDSS = 180 V ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Complementary to 2SJ200

文件：181.93 Kbytes 页数：3 Pages

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丝印：K1529；Package：SC-65；N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application ● High breakdown voltage : VDSS = 180 V ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Complementary to 2SJ200

文件：181.93 Kbytes 页数：3 Pages

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Silicon N-Channel MOS Type Field Effect Transistor

High-Power Amplifier Application● High breakdown voltage : VDSS = 180 V\n● High forward transfer admittance : |Yfs| = 4.0 S (typ.)\n● Complementary to 2SJ200

Toshiba

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丝印：K1529；Package：SC-65；N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

文件：490.19 Kbytes 页数：4 Pages

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丝印：K1529；Package：SC-65；High-Power Amplifier Application

文件：274.01 Kbytes 页数：4 Pages

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