丝印：K14N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA)

文件：250.26 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K14N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 1

文件：247.02 Kbytes 页数：10 Pages

TOSHIBA

东芝

14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super

文件：308.02 Kbytes 页数：9 Pages

SILAN

士兰微

E Series Power MOSFET

文件：1.09054 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

文件：184.88 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司