Silicon N Channel MOS FET

Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching

文件：82.98 Kbytes 页数：7 Pages

RENESAS

瑞萨

SOLID STATE HIGH POWER AMPLIFIER MODULES

文件：906.48 Kbytes 页数：2 Pages

CPI

SOLID STATE HIGH POWER AMPLIFIER MODULES

文件：906.48 Kbytes 页数：2 Pages

CPI

Silicon N-Channel MOS FET

Application\nHigh speed power switching •  High breakdown voltage VDSS= 1500 V\n•  Low drive current\n•  Suitable for switching regulator, DC-DC converter and motor driver;

HITACHI

日立

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星坤科技