Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：187.12 Kbytes 页数：6 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications • Switching Voltage Regulators

文件：246.65 Kbytes 页数：10 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：298.83 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：K12A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

TOSHIBA

东芝