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丝印：K125A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：488.95 Kbytes 页数：9 Pages

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丝印：K125E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：527.47 Kbytes 页数：9 Pages

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丝印：K125N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：526.23 Kbytes 页数：9 Pages

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东芝

丝印：K125U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：535.52 Kbytes 页数：9 Pages

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东芝

丝印：K125Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：549.29 Kbytes 页数：10 Pages

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包装：散装 类别：五金件，紧固件，配件 旋钮 描述：KNOB FLUTED 0.250\

TE Connectivity ALCOSWITCH Switches

包装：散装 类别：五金件，紧固件，配件 旋钮 描述：KNOB FLUTED 0.250\

TE Connectivity ALCOSWITCH Switches

包装：散装 类别：五金件，紧固件，配件 旋钮 描述：KNOB FLUTED 0.250\

TE Connectivity ALCOSWITCH Switches