首页 >JV2N6845>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.60ohm,Id=-4.0A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(100V,P-CHANNEL) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:ver | IRF International Rectifier | IRF | ||
P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-CHANNELENHANCEMENTMOSFET P-CHANNELENHANCEMENTMOSFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.60ohm,Id=-4.0A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(100V,P-CHANNEL) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:ver | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.60ohm,Id=-4.0A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(100V,P-CHANNEL) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:ver | IRF International Rectifier | IRF |
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