首页 >JV2N6790>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
3.5A,200V,0.800Ohm,N-ChannelPower 3.5A,200V,0.800Ohm,N-ChannelPowerMOSFET The2N6790isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransis | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELMOSFET DESCRIPTION This2N6790UdeviceismilitaryqualifieduptoaJANTXVlevelforhigh-reliabilityapplications.Microsemialsooffersnumerousotherproductstomeethigherandlowerpowervoltageregulationapplications. FEATURES •JEDECregistered2N6790U. •JAN,JANTX,andJANTXVqualificat | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.80ohm,Id=3.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstate | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.80ohm,Id=3.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstate | IRF International Rectifier | IRF |
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