首页 >JV2N6786>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELENHANCEMENTE-MODE Description The2N6786isann-channelenhancement-modesilicon-gatepowerMOSfield-effecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlow | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=3.6ohm,Id=1.25A) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea | IRF International Rectifier | IRF | ||
HEXFETTRANSISTOR 400Volt,3.6Ω,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=3.6ohm,Id=1.25A) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea | IRF International Rectifier | IRF | ||
HEXFETTRANSISTOR 400Volt,3.6Ω,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage | SEME-LAB Seme LAB | SEME-LAB |
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