首页 >JV2N6784>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage | SEME-LAB Seme LAB | SEME-LAB | ||
2.25A,200V,1.500Ohm,N-ChannelPowerMOSFET 2.25A,200V,1.500Ohm,N-ChannelPowerMOSFET The2N6784isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENT-MODE 2.25A,200V,1.500Ohm,N-ChannelPowerMOSFET The2N6784isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransis | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6782,2N6784and2N6786switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6782,2N6784and2N6786switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=1.5ohm,Id=2.25A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R?쏷RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=1.5ohm,Id=2.25A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R?쏷RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF |
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