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2N5199	文件：418.22 Kbytes Page：1 Pages	N-ChannelDualSiliconJunctionField-EffectTransistor •DifferencialInputs AbsolutemaximumratingsatTA=25°C ReverseGateSource&GateDrainVoltage-50V ContinuousForwardGateCurrent50mA ContinuousDevicePowerDissipation300mW PowerDerating	InterFET InterFET Corporation	InterFET
2N5199	文件：169.08 Kbytes Page：1 Pages	MONOLITHICDUALN-CHANNELJFETS monolithicdualn-channelJFETsdesignedfor..... ■DifferentialAmplifiers ■FETInputOpAmps BENEFITS ●MinimumSystemErrorandCalibration5mVMaximumOffset(2N196,97) ●LowDrift5μV/°CMaximum(2N5196) ●SimplifiesAmplifierDesignLowOutputConductance	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5199	文件：4.13074 Mbytes Page：122 Pages	P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES	Intersil Intersil Corporation	Intersil
2N5199	文件：59.25 Kbytes Page：6 Pages	MonolithicN-ChannelJFETDuals DESCRIPTION The2N5196/5197/5198/5199JFETdualsaredesignedforhigh-performancedifferentialamplificationforawiderangeofprecisiontestinstrumentationapplications.Thisseriesfeaturestightlymatchedspecs,lowgateleakageforaccuracy,andwidedynamicrangewithIGguaranteedatVD	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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