LV10100CT

SchottkyBarrierDiodeinaTO-220PlasticPackage

LV10100DCT

SchottkyDiodeinaTO-252PlasticPackage

LV10100E

TO-277PlasticpackageSchottkydiode

LV10100FCT

SchottkyDiodeinaTO-220FPlasticPackage

MA10100

Siliconepitaxialplanartype

Siliconepitaxialplanartype Forswitchingcircuits ■Features •Highbreakdownvoltage:VR=200V •SmallterminalcapacitanceCt

MAT10100

AttenuatorDIE

MBR10100

SWITCHMODE??PowerRectifiers

SCHOTTKYBARRIERRECTIFIERS10AMPERES60to100VOLTS ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.These state–of–the–artdeviceshavethefollowingfeatures: •Guard–RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemperature •Guara

MBR10100

10.0AMPS.SchottkyBarrierRectifiers

FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition

MBR10100

HighVoltageSchottkyRectifiers

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum

MBR10100

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers ThisseriesofSWITCHMODEpowerrectifiersusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •Guard−RingforStressProtection •LowForwardVoltage •175°COperatingJunctionT