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DSEA29-12AC

30.0AmpereInsulatedDualCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

DSEC29-12AC

30.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

DSEE29-12CC

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryPhaseleg

Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowcathodetotabcapacitance(

IXYS

IXYS Corporation

DSEE29-12CC

30.0AmpereInsulatedDualTandemStructureInSeriesUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

DSEP29-12A

UltrafastRectifier

FEATURES •WithTO-220packaging •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Highsurgecapability •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP29-12A

30A,1200VSwitchModeSingleFastRecoveryEpitaxialDiode

PRODUCTFEATURE •UltrafastRecoveryTime •SoftRecoveryCharacteristics •LowRecoveryLoss •LowForwardVoltage •HighSurgeCurrentCapability •LowLeakageCurrent APPLICATION •Freewheeling,Snubber,Clamp •InversionWelder •PFC •PlatingPowerSupply •UltrasonicCleanerand

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

DSEP29-12A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●Antisaturationdiode

IXYS

IXYS Corporation

DWEP29-12

RectifierDiodes&FRED

IXYS

IXYS Corporation

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