Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 页数：102 Pages

Intel

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 页数：102 Pages

Intel

英特尔

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

文件：911.56 Kbytes 页数：68 Pages

NUMONYX

Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

文件：776.1 Kbytes 页数：67 Pages

NUMONYX

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

文件：911.56 Kbytes 页数：68 Pages

NUMONYX

Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

文件：776.1 Kbytes 页数：67 Pages

NUMONYX

Numonyx짰 Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)

Introduction This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications. Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Sin

文件：2.20301 Mbytes 页数：66 Pages

Micron

美光

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 页数：102 Pages

Intel

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

文件：1.60991 Mbytes 页数：102 Pages

Intel

英特尔

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

文件：276.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体