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M75N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB75N06

TMOSPOWERFET75AMPERES60VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB75N06HD

TMOSPOWERFET75AMPERES60VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB75N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP75N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP75N06HD

N-Channel60-V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP75N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP75N06HD

TMOSPOWERFET75AMPERESRDS(on)=10.0mOHM60VOLTS

HDTMOSE-FETHighDensityPowerFET N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

NTB75N06

PowerMOSFET

75AMPERES,60VOLTSRDS(on)=9.5mΩ Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Converters •P

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB75N06

PowerMOSFET75Amps,60Volts,N−ChannelTO−220andD2PAK

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •TheseDevicesarePb−FreeandareRoHSCompliant •NTBVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeR

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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