TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

文件：342.06 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES 60 VOLTS RDS(on)= 10 mOHM

N–Channel Enhancement–Mode Silicon Gate\n\nTheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advanced high

恩XP

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

文件：342.06 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

文件：287.24 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：287.24 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N−Channel Power MOSFET

ONSEMI

安森美半导体