MTB75N06

TMOS POWER FET 75 AMPERES 60 VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

MTB75N06

TMOS POWER FET 75 AMPERES 60 VOLTS RDS(on)= 10 mOHM;

N–Channel Enhancement–Mode Silicon Gate\n\nTheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–celldensity HDTMOS powerFET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applicationsin power supplies, converters and PWM motor controls,these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are criticaland offer additional safety margin against unexpected voltage transients.• Avalanche Energy Specified\n• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSSand VDS(on)Specified at Elevated Temperature\n• Short Heatsink Tab Manufactured — Not Sheared\n• Specially Designed Leadframe for Maximum Power Dissipation\n• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number\n

ETC

MTB75N06HD

TMOS POWER FET 75 AMPERES 60 VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

MTB75N06HD

N?묬hannel Power MOSFET

MTB75N06HD

N−Channel Power MOSFET;

MTB75N06HDT4

N?묬hannel Power MOSFET