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LMAK50N06

N-ChannelEnhancementModeFieldEffectTransistor

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LMAK50N06A

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MCU50N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

ME50N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MS50N06

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MTB50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06EL

TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS

TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB50N06EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

供应商型号品牌批号封装库存备注价格
捷捷微
23+
TO-220C-3L
68000
捷捷微全系列供应,支持终端生产
询价
捷捷微
23+
TO-220C-3L
50000
专业配单,原装正品假一罚十,代理渠道价格优
询价
JJW/捷捷微
24+
TO-220C
50000
只做原装,欢迎询价,量大价优
询价
JJW/捷捷微
24+
TO-220C
50000
全新原装,一手货源,全场热卖!
询价
JJW捷捷微
25+
TO-220
65406
原厂原装,价格优势
询价
JJW
2226
TO-220
846
原装现货实单支持
询价
JJW/捷捷微
22+
TO-220
22366
原装正品
询价
JJW
2344
TO-220
20000
原装正品价格优惠,志同道合共谋发展
询价
JJW
2226
TO-220
22366
全新原装
询价
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
更多JMT50N06A供应商 更新时间2025-7-25 18:19:00