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LMAK50N06A

Marking:NCE6050KA;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MCU50N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

ME50N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MS50N06

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MTB50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06EL

TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS

TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB50N06EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB50N06V

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
LEIDITECH(雷卯)
24+
con
10000
查现货到京北通宇商城
询价
LAIRD
20+
射频元件
255
就找我吧!--邀您体验愉快问购元件!
询价
NSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
NS
24+
ZIP
500
询价
NS
2020+
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NS/国半
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NS/国半
24+
12000
原装正品 有挂就有货
询价
龙腾
TO-247
21000
全新、原装
询价
更多LMAK50N06A供应商 更新时间2025-7-16 11:06:00