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LTV-0601

LTV-0601(PreliminaryVersion)

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

MSL0601RGB

SmallandhighBrightnessside-viewRGBLED

ROHMRohm

罗姆罗姆半导体集团

MSL0601RGBU

SmallandhighBrightnessside-viewRGBLED

ROHMRohm

罗姆罗姆半导体集团

N0601N

N-CHANNELMOSFETFORSWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) •Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) •Hig

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

N0601N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PF0601

ShieldedDrumCore

pulse

Pulse A Technitrol Company

PF0601

SMTPowerInductors

Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH

pulse

Pulse A Technitrol Company

PF0601

ShieldedDrumCore-PF0464NL/PF0465NLSeries

pulse

Pulse A Technitrol Company

PF0601

SMTPOWERINDUCTORS

pulse

Pulse A Technitrol Company

PF0601

SMTPOWERINDUCTORS

pulse

Pulse A Technitrol Company

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