| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
650VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET650V,7.0A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET650V,7.0A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SimpleDriveRequirement | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
7.0A650VN-CHANNELPOWERMOSFET FEATURES VDS=650V ID=7.0A RDS(on)=1.8ohm@VGS=10V Highswitchingspeed 100avalanchetested | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IP9 |
23+ |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
JJM |
50 |
询价 | |||||
JJW/捷捷微 |
24+ |
TO-220 |
50000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
JJW/捷捷微 |
24+ |
TO-220 |
50000 |
全新原装,一手货源,全场热卖! |
询价 | ||
捷捷微 |
23+ |
TO-220FP-3L |
68000 |
捷捷微全系列供应,支持终端生产 |
询价 | ||
捷捷微 |
23+ |
TO-220FP-3L |
50000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
捷捷微 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 |
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