JCW100N25P说明书PDF资料供应价格无锡固电-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFH100N25P	文件：100.86 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division
IXFK100N25	文件：328.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFK100N25	文件：97.85 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap	IXYS IXYS Integrated Circuits Division
IXFN100N25	文件：78.3 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Low HiPerFETPowerMOSFETs SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi	IXYS IXYS Integrated Circuits Division
IXFR100N25	文件：81.48 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowd	IXYS IXYS Integrated Circuits Division
IXFR100N25	文件：309.43 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFX100N25	文件：367.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFX100N25	文件：97.85 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap	IXYS IXYS Integrated Circuits Division
IXTK100N25P	文件：613.87 Kbytes Page：5 Pages	PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division
IXTK100N25P	文件：302.66 Kbytes Page：2 Pages	N-ChannelPowerMOSFET DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ（max）@VGS=10V ·UnclampedInductiveSwitching APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXTQ100N25P	文件：613.87 Kbytes Page：5 Pages	PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division
IXTT100N25P	文件：613.87 Kbytes Page：5 Pages	PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division
RCJ100N25	文件：298.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
RCJ100N25	文件：724.32 Kbytes Page：14 Pages	Nch250V10APowerMOSFET	ROHMRohm Semiconductor 罗姆罗姆半导体集团
RCX100N25	文件：172.32 Kbytes Page：4 Pages	SILICONN-CHANNELMOSFET	ROHMRohm Semiconductor 罗姆罗姆半导体集团
RCX100N25	文件：295.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	JCW10D06D	JCW/嘉灿微	21+ROHS	PDFN56-8L	988800	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市艾宇欣科技有限公司	JCW-159/U(40)	Hirose	2020+	N/A	6	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	JCW-159/U(40)	HIROSE	20+	连接器	493	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	JCW-159/U(40)	Hirose	22+	NA	6	加我QQ或微信咨询更多详细信息,	询价
上海金庆电子技术有限公司	JCW-1N23	WE	新		1	全新原装货期两周	询价
深圳市弘扬芯城科技有限公司	JCW-5E	EATON(伊顿)	23+		6000		询价
深圳市特顺芯科技有限公司	JCX0227			BGA	234		询价
深圳市安富世纪电子有限公司	JCX68JTOP20IDM51ZZZA1	INFINEON	23+		8000	只做原装现货	询价
深圳市勤思达科技有限公司	JCXS156N	IC	23+	SSOP36	8000	全新原装现货,欢迎来电咨询	询价
深圳市卓越微芯电子有限公司	JCXS156N	IC	2020+	SSOP36	2959	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多JCW100N25P供应商更新时间2024-4-27 11:10:00

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