首页 >JCS4N60VC-IPAK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELMOSFET APPLICATIONS HighefficiencyswitchmodepowersuppliesElectroniclampballastsbasedonhalfbridgeUPS FEATURES Lowgatecharge LowCrss(typical14pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
N-CHANNELMOSFET APPLICATIONS HighefficiencyswitchmodepowersuppliesElectroniclampballastsbasedonhalfbridgeUPS FEATURES Lowgatecharge LowCrss(typical14pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
JCS4N60E APPLICATIONS Highfrequencyswitching modepowersupply Electronicballast LEDpowersupply FEATURES Lowgatecharge LowCrss(typical2.5pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
JJW | ||||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=3.2A •D | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=3.2A •D | KECKEC CORPORATION KEC株式会社 | KEC | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=3.2A •D | KECKEC CORPORATION KEC株式会社 | KEC |
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