首页 >JAV5502-ACL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNPlanarSiliconTransistor HighVoltagePowerSwitchModeApplication •SmallVarianceinStorageTime •WideSafeOperatingArea •SuitableforElectronicBallastApplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNTripleDiffusedPlanarSiliconTransistor Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=1200V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.6V(Max)@IC=0.4A APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=600V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.6V(Max)@IC=0.4A APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNTripleDiffusedPlanarSiliconTransistor Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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