JANTXV2N5039数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.

特性 Features

The device package outlines are as follows: TO-204AA (TO-3) for all encapsulated device types.
The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/439.

简介

JANTXV2N5039属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANTXV2N5039晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。