Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-39

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A TO39

Microchip

微芯科技

3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：63.87 Kbytes 页数：3 Pages

Microsemi

美高森美

SILICON NPN TRANSISTORS

文件：508.56 Kbytes 页数：2 Pages

Central

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

文件：174.77 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司