首页 >JANTXV1N5530D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
JANTXV1N5530D | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
包装：卷带（TR） 封装/外壳：DO-204AH，DO-35，轴向 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | ||
包装：卷带（TR） 封装/外壳：DO-213AA（玻璃） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 10V 500MW DO213AA | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | ||
包装：散装 封装/外壳：DO-213AA（玻璃） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  | ||
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc |  | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | ||
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | | ||
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated |  | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |
详细参数
- 型号：
JANTXV1N5530D
- 制造商：
Microsemi Corporation
- 功能描述：
LOW VOLTAGE AVALANCHE ZENER, DO-213AA, SD, LAW - Trays
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi |
1941+ |
N/A |
909 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
1809+ |
DO-35 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Microsemi |
22+ |
NA |
909 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Microchip |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
MICROSEMI-美高森美 |
24+25+/26+27+ |
DO-35 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
MICROSEMI |
638 |
原装正品 |
询价 | ||||
MICROCHIP(美国微芯) |
23+ |
DO35 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
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