NPN Silicon Power Switching 200V to 300V, 5A

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified The device package for the encapsulated device types are as follows: TO-66, TO-5 and TO-39, and surface mount version U3. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/455.;

Microchip

微芯科技

NPN POWER SILICON SWITCHING TRANSISTOR

文件：118.92 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Package：TO-213AA，TO-66-2；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 300V 5A TO66

MICROCHIP

微芯科技

NPN POWER SILICON SWITCHING TRANSISTOR

文件：118.92 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件：11.06 Kbytes 页数：1 Pages

SEME-LAB