JANTX2N5238

NPN Silicon Power Switching 70V to 120V, 10A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394.; The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.;

JANTX2N5238

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 170V 10A TO5

JANTX2N5238S

NPN Silicon Power Switching 70V to 120V, 10A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394.; The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.;

JANTX2N5238S

Package：TO-205AD，TO-39-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 170V 10A TO39

JANTX2N7225

IR
TO-3P