JANTX2N3419S中文资料Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-39数据手册Microchip规格书

描述 Description

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39) package, when S suffix and a low profile surfacemount U4 packages. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

特性 Features

JEDEC registered 2N3418 through 2N3421 series
JANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393
RoHS compliant versions available (commercial grade only)
VCE(sat) = 0.25 V @ Ic = 1 A
Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA
Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -10 0 mA
General purpose transistors for medium power applications requiring high frequency switching and low package profile
Military and other high-reliability applications.

简介

JANTX2N3419S属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANTX2N3419S晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。