JANTX2N2920数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-阵列规格书PDF

描述 Description

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels (\"M\", \"D\", \"P\", \"L\", \"R”, “F”, “G” and “H”) are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels.

特性 Features

The device packages for the encapsulated device types are as follows: TO-18 and UB, surface mount.
The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/323.

简介

JANTX2N2920属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由制造生产的JANTX2N2920晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。