JANSR2N7661T3中文资料IRF数据手册PDF规格书

特性 Features

 Single event effect (SEE) hardened

(up to LET of 90.5 MeV·cm2/mg)

 Improved SOA for linear mode operation

 Low RDS(on)

 Improved avalanche energy

 Simple drive requirements

 Hermetically sealed

 Electrically isolated

 Ceramic eyelets

 ESD rating: class 2 per MIL-STD-750, Method 1020

描述 Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs

are the first radiation hardened devices that are based on a superjunction technology. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 90.5 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA allows for better

performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC) or DCDC

converters. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.