JANSR2N7659U3CE中文资料IRF数据手册PDF规格书

厂商型号	JANSR2N7659U3CE
功能描述	Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) -60V, -32A, P-channel, R9 Superjunction Technology
文件大小	558.72 Kbytes
页面数量	14 页
生产厂商	International Rectifier
企业简称	IRF
中文名称	International Rectifier官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 11:24:00
人工找货	JANSR2N7659U3CE价格和库存，欢迎联系客服免费人工找货

特性 Features

• Single event effect (SEE) hardened

(up to LET of 91.3 MeV·cm2/mg)

• Low RDS(on)

• Rugged SOA

• Improved Avalanche Energy

• Simple drive requirements

• Hermetically sealed

• Ceramic package

• Light weight

• Surface mount

ESD rating: Class 2 per MIL-STD-750, Method 1020

描述 Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 91.3 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA will allow for better

performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices

retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature

stability of electrical parameters.