NPN Silicon Power Switching 70V to 120V, 10A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.;

Microchip

微芯科技

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 10A TO5

MICROCHIP

微芯科技

Type 2N5237 Geometry 3111 Polarity NPN

Features: • Silicon power transistor for use in high speed switching applications. • Housed in a TO-39 case. • Also available in chip form using the 3111 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases.

文件：145.57 Kbytes 页数：2 Pages

SEMICOA

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394

文件：63.3 Kbytes 页数：2 Pages

MICROSEMI

美高森美

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394

文件：63.3 Kbytes 页数：2 Pages

MICROSEMI

美高森美