Ultra Fast Rectifier (trr less than 100ns)

FeaturesHermetically SealedMilitary ApprovedRuggedized DesignUltra Fast Reverse Recovery

Microchip

微芯科技

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

文件：46.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：RECTIFIER UFR,FRR

MICROCHIP

微芯科技

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

文件：46.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

文件：46.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

文件：46.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美