Darlington PNP Silicon Power -100V, -12A

This specification covers the performance requirements for PNP silicon, high-power Darlington, 2N7371 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/623. The device package outline is a three terminal flange mount header TO-254AA (T1).;

Microchip

微芯科技

Package：TO-254-3，TO-254AA（直引线）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 0.001A TO254

MICROCHIP

微芯科技

PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

文件：55.57 Kbytes 页数：2 Pages

MICROSEMI

美高森美

PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

文件：169.54 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司