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2N2907A

ChipType2C2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

2N2907A

PNPswitchingtransistors

DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:2N2222and2N2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

2N2907A

HIGHSPEEDMEDIUMPOWERPNPSWITCHINGTRANSISTOR

SEME-LAB

Seme LAB

2N2907A

Type2N2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

2N2907A-BP

PNPSwitchingTransistors

Features •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体公司

2N2907ACECC

BipolarPNPDeviceinaHermeticallysealedTO18

SEME-LAB

Seme LAB

2N2907ACSM

SILICONPLANAREPITAXIALPNPTRANSISTOR

SEME-LAB

Seme LAB

2N2907ACSM

HIGHSPEED,MEDIUMPOWER,PNPSWITCHINGTRANSISTORINAHERMETICALLYSEALEDCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SEME-LAB

Seme LAB

2N2907ADCSM

DUALHIGHSPEED,MEDIUMPOWERPNPSWITCHINGTRANSISTORINAHERMETICALLYSEALEDCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS

SEME-LAB

Seme LAB

2N2907ADCSM

DUALHIGHSPEED,MEDIUMPOWERPNPSWITCHINGTRANSISTOR

SEME-LAB

Seme LAB

2N2907ADIE

SWITCHINGTRANSISTORPNPSILICON

FEATURES: ■ELECTRICALPERFORMANCEI.A.W.MIL-PRF-19500/291 ■AVAILABLEINWAFERORCHIPFORMFORHYBRIDAPPLICATIONS ■GENERALPURPOSE-HIGHSPEEDSWITCHINGAPPLICATIONS ■LOWVCE(sat):.4V@IC=150mAdc

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AHR

Hi-Rel60V-0.6APNPtransistor

Description The2N2907AHRisasiliconplanarPNPtransistorspecificallydesignedandhousedinhermeticpackagesforaerospaceandHi-Relapplications.ItisavailableintheJANqualificationsystem(MIL-PRF19500compliance)andintheESCCqualificationsystem(ESCC5000compliance).Incase

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

2N2907AHR

Hi-Rel60V,0.6APNPtransistor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

2N2907AJ.TX.V

MediumCurrentGeneralPurposeAmplifiersandSwitches

RAYTHEONRaytheon Company.

雷神

2N2907AL

RADIATIONHARDENED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AL

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AQCSM

QUADSILICONPLANAREPITAXIALPNPTRANSISTORS

SEME-LAB

Seme LAB

2N2907AQCSM

QUADSILICONPLANAREPITAXIALPNPTRANSISTORS

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

2N2907ARHR

Hi-Rel60V,0.6APNPtransistor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

2N2907ARUB

Hi-Rel60V,0.6APNPtransistor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    JAN2N2907A

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 系列:

    Military, MIL-PRF-19500/291

  • 包装:

    散装

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.6V @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    50nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,10V

  • 工作温度:

    -65°C ~ 200°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-206AA,TO-18-3 金属罐

  • 供应商器件封装:

    TO-18(TO-206AA)

  • 描述:

    TRANS PNP 60V 0.6A TO18

供应商型号品牌批号封装库存备注价格
Microchip Technology
23+
TO-206AA,TO-18-3 金属罐
30000
晶体管-分立半导体产品-原装正品
询价
MICROCHIP(美国微芯)
23+
TO-18
977
原厂订货渠道,支持BOM配单一站式服务
询价
MSC
12+
N/A
2275
进口原装公司现货,假一罚十!
询价
MSC
22++
TO-18
4280
原装正品优势渠道!实单特价!
询价
MOT
2022+
CAN3
5000
原厂授权代理 价格绝对优势
询价
MOT
02+
CAN3
2398
询价
MOTOROLA/ST
22+
CAN-3
4650
询价
MOTOROLA
23+
原厂封装
9526
询价
MOTOROLA
23+
CAN3
9980
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
MSC
16+
NA
8800
原装现货,货真价优
询价
更多JAN2N2907A供应商 更新时间2024-5-2 14:14:00