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JAN1N5419-TR中文资料Rectifier Diode Switching 2-Pin 500V, 3A, 250ns B-body T/R数据手册Microchip规格书

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厂商型号

JAN1N5419-TR

功能描述

Rectifier Diode Switching 2-Pin 500V, 3A, 250ns B-body T/R

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

下载地址下载地址二

更新时间

2025-9-28 16:03:00

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JAN1N5419-TR规格书详情

描述 Description

This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

Popular JEDEC registered 1N5415 thru 1N5420 series
Voidless hermetically sealed glass package
Quadruple-layer passivation
Internal “Category 1” metallurgical bonds
Working Peak Reverse Voltage 50 to 600 volts
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411
RoHS compliant versions available (commercial grade only)
Fast recovery 3 amp 50 to 600 volt rectifiers
Military and other high-reliability applications
General rectifier applications including bridges, half-bridges, catch diodes, etc
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip “MicroNote 050”.

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