FJA4213OTU

Marking：J4213O；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

FJA4213RTU

Marking：J4213R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

FJL4315OTU

Marking：J4315O；Package：TO-264；NPN Epitaxial Silicon Transistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

FJL4315RTU

Marking：J4315R；Package：TO-264；NPN Epitaxial Silicon Transistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

RT9166A-33GX

Marking：J4=；Package：SOT-89；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

RT9166A-33PX

Marking：J4-；Package：SOT-89；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

US6J41FRA

Marking：J41；Package：SOT-363T；-20V PchPch Small Signal MOSFET

lFeatures 1)Lowon-resistance 2)Built-inG-SProtectionDiode 3)SmallSurfaceMountPackage(TUMT6) 4)Pb-freeleadplating;RoHScompliant 5)AEC-Q101Qualified lApplication Switching

XPH3R114MC

Marking：J42；Package：SOP；MOSFETs Silicon P-Channel MOS

Applications •Automotive •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=2.4mΩ(typ.)(VGS=-10V) (4)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-40V) (5)E

XPH4R714MC

Marking：J43；Package：SOP；MOSFETs Silicon P-Channel MOS

1.Applications •Automotive •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=3.6mΩ(typ.)(VGS=-10V) (4)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-40V)

ZC832

Marking：J4S；Package：SOT-23；SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23SILICONVARIABLECAPACITANCE FEATURES *CloseToleranceC-VCharacteristics *HighTuningRatio *LowIREnablingExcellentPhaseNoisePerformance(IRTypically