MUZ6V8

Marking：J3；Package：USM；Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

PMN25ENEA

Marking：J3；Package：TSOP6；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175°C •TrenchMOSFET

S9013

Marking：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

S9013

Marking：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

S9013

Marking：J3；Package：SOT-23；TRANSISTOR(NPN)

FEATURES ComplementarytoS9012 ExcellenthFElinearity

S9013

Marking：J3；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

S9013

Marking：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=500mA). ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW). APPLICATIONS ●HighCollectorCurrent.

S9013

Marking：J3；Package：SOT-23；TRANSISTOR (NPN)

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

S9013

Marking：J3；Package：SOT-23；NPN Transistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

S9013-H

Marking：J3；Package：SOT-23；NPN Transistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A