首页 >J2N6051>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SILICONDARLINGTONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
COLLECTOR-EMITTERVOLTAGE DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconPNPDarlingtionPowerTransistor DESCRIPTION •Built-inBase-EmitterShuntResistors •HighDCcurrentgainhFE=750(Min)@IC=-6A •Collector-EmitterSustainingVoltageVCEO(SUS)=-80V(Min) •Complementtotype2N6058 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar | COMSET Comset Semiconductor | COMSET | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | boca | ||
BipolarPNPDeviceinaHermeticallysealedTO3 BipolarPNPDeviceinaHermeticallysealedTO3MetalPackage. BipolarPNPDevice. VCEO=80V IC=12A | SEME-LAB Seme LAB | SEME-LAB | ||
PNPDARLINGTONPOWERSILICONTRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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