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MTP3N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP3N50

TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS

TMOSE-FET™HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP3N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP3N50E

N?묬hannelEnhancement?묺odeSiliconGate

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP3N50E

TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS

TMOSE-FET™HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

PHB3N50E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP3N50

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHP3N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP3N50

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePower

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP3N50E

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    IXTY3N50P

  • 功能描述:

    MOSFET 3.6 Amps 500 V 2 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
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IXYS
23+
TO-252
11846
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JINGDAO/晶导微
23+
SOD-123FL
69820
终端可以免费供样,支持BOM配单!
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IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
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IXYS
1809+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
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IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
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IXYS
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
I
23+
TO-252
6000
原装正品,支持实单
询价
IXYS
2022+
TO-252-3,DPak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
询价
更多IXTY3N50P供应商 更新时间2025-7-28 9:07:00