N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 120A@ TC= 25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on)= 23mΩ(Max)@VGS= 10V APPLICATIONS · Switch-Mode and Resonant-Mode Power Supplies · DC-DC Converters · PFC Circuits · AC and DC Motor Drives · Robotics and Servo

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ISC

无锡固电

Preliminary Technical Information

文件：200.79 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道 超-超级结MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.66 Kbytes 页数：2 Pages

ISC

无锡固电

Preliminary Technical Information

文件：202.86 Kbytes 页数：5 Pages

IXYS

艾赛斯

Preliminary Technical Information

文件：135.93 Kbytes 页数：5 Pages

IXYS

艾赛斯